MTE652T & MTE652T-I
DRAM Cache embedded
Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
Wide-temperature model available: promised operational reliability in a wide temperature range (from -40℃ to 85℃)
MTE652T M.2 SSD features the PCI Express (PCIe) Gen 3 x4 interface and is compatible with NVM Express (NVMe) 1.3 specifications to achieve never-before-seen transfer speeds. The MTE652T features state-of-the-art 3D NAND technology, which allows 96 layers of 3D NAND flash chips to be vertically stacked. Compared to 3D NAND at 64 layers, this density breakthrough greatly improves storage efficiency. The MTE652T is built with DRAM cache for fast access, and is fully tested in-house to guarantee reliability in mission-critical applications, boasting an endurance rating of 3K Program/Erase cycles.
| Dimensions | 80 mm x 22 mm x 3.58 mm (3.15" x 0.87" x 0.14") |
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| Weight | 9 g (0.32 oz) |
| Form Factor |
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| M.2 Type |
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Interface |
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| Bus Interface |
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Storage |
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| Flash Type |
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| Capacity |
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Operating Environment |
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| Operating Voltage |
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| Operating Temperature |
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| Storage Temperature | -40°C (-40°F) ~ 85°C (185°F) |
| Humidity | 5% ~ 95% |
| Shock |
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| Vibration (Non-operating) | 2.17 G (peak-to-peak), 10 Hz ~ 700 Hz (frequency) |
Power |
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| Power Consumption (Operation) | 3.3 watt(s) |
| Power Consumption (Sleep) | 0.6 watt(s) |
Performance |
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| Sequential Read/Write (CrystalDiskMark, max.) | Read: 2,100 MB/s Write: 1,000 MB/s |
| 4K Random Read/Write (IOmeter, max.) | Read: 190,000 IOPS Write: 290,000 IOPS |
| Mean Time Between Failures (MTBF) | 3,000,000 hour(s) |
| Terabytes Written (Max.) | 1,080 TB |
| Drive Writes Per Day (DWPD) | 2 (3 yrs) |
| Note |
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