UTE210T U.2 SSD
PCIe Gen 4x4 interface, 112-layer 3D NAND flash, Power Loss Protection (PLP)
Key Features:
- Compliant with RoHS 2.0 standards
- Compliant with NVM Express specification 1.4
- Compliant with PCI Express specification 4.0
- PCIe Gen 4 x4 interface
- DDR4 DRAM Cache embedded
- Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
- Anti-sulfur technology implemented to prevent sulfurization in the environment
- Power Loss Protection (PLP) to prevent data loss in the event of a sudden power outage
Transcend's UTE210T U.2 SSD is constructed using 112-layer 3D NAND flash, an 8-channel controller, and a PCIe Gen 4x4 interface, setting new benchmarks in data transfer efficiency. Its built-in DRAM cache enables fast random read and write speeds, while the anti-sulphur resistor guarantees high storage reliability even in harsh conditions. The UTE210T also boasts superior heat dissipation, ensuring high-speed operations without the risk of overheating.
Moreover, the UTE210T U.2 SSD is designed with a built-in tantalum capacitor, facilitating the Power Loss Protection (PLP) function. This ensures data integrity and storage reliability during unexpected power outages, safeguarding important information. Transcend's UTE210T undergoes 100% chamber testing in-house, ensuring extended operating temperatures ranging from -20℃ to 75℃. It is perfectly suited for high-performance computing (HPC), data centres, big data analytics, online transaction processing (OLTP), high-resolution image streaming, AI applications, and more.
Key Features:
- Firmware Features
- Supports NVM command
- Dynamic thermal throttling
- Built-in LDPC ECC (Error Correction Code) functionality
- Advanced Global Wear-Leveling and Block management for reliability
- Advanced Garbage Collection
- Supports S.M.A.R.T. function to conduct health monitoring, analysis, and reporting for storage devices
- TRIM command for better performance
- NCQ command for better performance
- Full drive encryption with Advanced Encryption Standard (AES) (optional)
- Hardware Features
- Compliant with RoHS 2.0 standards
- Compliant with NVM Express specification 1.4
- Compliant with PCI Express specification 4.0
- PCIe Gen 4 x4 interface
- DDR4 DRAM Cache embedded
- Endurance: 3K P/E cycles (Program/Erase cycles) guaranteed
- Anti-sulfur technology implemented to prevent sulfurization in the environment
- Power Loss Protection (PLP) to prevent data loss in the event of a sudden power outage
Appearance |
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Dimensions | 100 mm x 69.85 mm x 7 mm (3.94" x 2.75" x 0.28") |
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Weight | 60 g (2.11 oz) |
Form Factor |
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Interface |
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Bus Interface |
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Storage |
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Capacity |
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Flash Type |
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Operating Environment |
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Operating Voltage |
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Operating Temperature |
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Storage Temperature | -55°C (-67°F) ~ 85°C (185°F) |
Humidity | 5% ~ 95% |
Shock |
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Vibration (Operating) | 20 G (peak-to-peak), 7 Hz ~ 2000 Hz (frequency) |
Power |
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Power Consumption (Operation) | 9.0 watt(s) |
Power Consumption (IDLE) | 1.0 watt(s) |
Performance |
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Sequential Read/Write (CrystalDiskMark) | Read: up to 7,000 MB/s Write: up to 6,300 MB/s |
4K Random Read/Write (IOmeter) | Read: up to 580,000 IOPS Write: up to 460,000 IOPS |
Mean Time Between Failures (MTBF) | 3,000,000 hour(s) |
Terabytes Written (TBW) | up to 3260 TBW |
Drive Writes Per Day (DWPD) | 1.48 (3 yrs) |
Note |
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